 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SI7366DP New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 D TrenchFETr Power MOSFET D Qg Optimized ID (A) 20 16 rDS(on) (W) 0.0055 @ VGS = 10 V 0.009 @ VGS = 4.5 V APPLICATIONS D Synchronous Rectifier for DC/DC PowerPAKr SO-8 D 6.15 mm S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G 5.15 mm G Ordering Information: SI7366DP-T1 S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 20 "20 20 17 50 4.1 5 3.2 Steady State Unit V 13 10 A 1.4 1.7 1.1 -55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72296 S-31414--Rev. A, 07-Jul-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 20 53 3.4 Maximum 25 70 4.5 Unit _C/W C/W 1 SI7366DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 16 A VDS = 6 V, ID = 20 A IS = 4.5 A, VGS = 0 V 30 0.0045 0.0072 48 0.76 1.1 0.0055 0.009 1.0 3.0 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 4.1 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 20 A 16 6 5.2 1.8 21 16 58 15 40 32 25 90 23 80 ns W 25 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 60 50 40 30 20 Output Characteristics VGS = 10 thru 4 V 60 50 40 30 20 10 0 0.0 Transfer Characteristics I D - Drain Current (A) I D - Drain Current (A) TC = 125_C 25_C -55_C 3V 10 0 0 1 2 3 4 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72296 S-31414--Rev. A, 07-Jul-03 2 SI7366DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.015 Vishay Siliconix On-Resistance vs. Drain Current 3000 Capacitance r DS(on) - On-Resistance ( W ) 0.012 C - Capacitance (pF) 2400 Ciss 0.009 VGS = 4.5 V 1800 0.006 VGS = 10 V 1200 Coss 600 Crss 0.003 0.000 0 10 20 30 40 50 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 3 6 VDS = 10 V ID = 20 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 20 A r DS(on) - On-Resistance ( W) (Normalized) 9 12 15 18 21 1.4 1.2 1.0 0.8 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 60 0.030 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 TJ = 25_C r DS(on) - On-Resistance ( W ) 0.024 I S - Source Current (A) 0.018 ID = 20 A 0.012 0.006 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.000 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Document Number: 72296 S-31414--Rev. A, 07-Jul-03 www.vishay.com 3 SI7366DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 ID = 250 mA V GS(th) Variance (V) -0.0 -0.2 -0.4 -0.6 -0.8 -50 40 Power (W) 120 200 Single Pulse Power 160 80 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) 100 Limited by rDS(on) 10 I D - Drain Current (A) Safe Operating Area, Junction-to-Case 1 ms 10 ms 1 100 ms 1s 10 s 0.1 TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 53_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72296 S-31414--Rev. A, 07-Jul-03 SI7366DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Single Pulse 0.01 10-4 0.02 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72296 S-31414--Rev. A, 07-Jul-03 www.vishay.com 5 |
Price & Availability of SI7366DP
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |